Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
High Power Dissipation
High Current Capacity
Complement to Type 2SC4278
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
For audio and general purpose applications
Full PDF Text Transcription for 2SA1633 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SA1633. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor 2SA1633 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·High Power Dissipation ·High Current Capacity ·Complement...
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-150V(Min) ·High Power Dissipation ·High Current Capacity ·Complement to Type 2SC4278 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
2SA1633 Datasheet
