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2SA1640 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ (IC= -3A, IB= -0.1A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, driver and p

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isc Silicon PNP Power Transistor 2SA1640 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)...

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O= -30V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ (IC= -3A, IB= -0.1A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, driver and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website: www.iscsem