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2SA1649 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Available for high-current control in small dimension ·Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak NOTE1 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature -20 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -3A;

IB= -200mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -4A;

Overview

isc Silicon PNP Power Transistor 2SA1649.