2SA1651 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage VCEO= -100V(Min). Fast switching speed. Low collector saturation voltage. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SA1651
Manufacturer: Inchange Semiconductor
File Size: 213.04 KB
Datasheet: 2SA1651_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7 A ICM Collector

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2SA1651 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1651-like datasheet