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2SA1695 - POWER TRANSISTOR

General Description

High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VC

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INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) ·Good Linearit...

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Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4468 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -4 A PC 100 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ www.DataSheet4U.