Low Collector Saturation Voltage
:VCE(sat)= -0.5(V)(Max)@IC= -2A
High Switching Speed
Complement to Type 2SC4511
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose applications.
Full PDF Text Transcription for 2SA1725 (Reference)
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2SA1725. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor 2SA1725 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4511 ·...
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.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4511 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Collector Current-Continuous -3 A PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
2SA1725 Datasheet
