Full PDF Text Transcription for 2SA1757 (Reference)
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isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)...
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O= -60V(Min) ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
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2SA1757
PNP Transistor
Rohm
2SA1757
Silicon PNP transistor
BLUE ROCKET ELECTRONICS
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