High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V(Min)
Good Linearity of hFE
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PAR
Full PDF Text Transcription for 2SA1788 (Reference)
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isc Silicon PNP Power Transistor 2SA1788 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations...
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)CEO= -120V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
2SA1788 Datasheet
