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2SA1789 - Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA

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isc Silicon PNP Power Transistor 2SA1789 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations ...

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)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.