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2SA1837 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) High Current-Gain Bandwidth Product Complement to Type 2SC4793 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifi

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1837 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.