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2SA1859A - Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) Complement to Type 2SC4883A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Full PDF Text Transcription for 2SA1859A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA1859A. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Complement to Type 2SC4883A ·Minimum Lot-to-Lot variations for ...

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(Min) ·Complement to Type 2SC4883A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1859A isc website： www.iscsemi.

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