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2SA1930 - Silicon PNP Power Transistor

Description

High Transition Frenquency : fT=200MHz(Typ.) Complementary to 2SC5171 APPLICATIONS Power amplifier applications Driver stage amplifier applications isc Product Specification 2SA1930 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

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Datasheet Details

Part number 2SA1930
Manufacturer Inchange Semiconductor
File Size 73.04 KB
Description Silicon PNP Power Transistor
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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SC5171 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications isc Product Specification 2SA1930 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 20 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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