2SA2140 transistor equivalent, silicon pnp power transistor.
*Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min)
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power amplification and for TV VM circ.
Image gallery
Download