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2SA2151A - Silicon PNP Power Transistor

Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) Good Linearity of hFE Complement to Type 2SC6011A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAX

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Datasheet Details

Part number 2SA2151A
Manufacturer Inchange Semiconductor
File Size 221.62 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor 2SA2151A DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 160 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
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