2SA636 Datasheet | Inchange Semiconductor

DESCRIPTION - With TO-202 package - plement to type 2SC1098/1098A - High breakdown voltage - High transition frequency APPLICATIONS - For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SA636 VCEO Collector-emitter voltage 2SA636A VEBO IC ICM IB CONDITIONS Open emitter VALUE -70 -45 UNIT V Open base -60 Open collector -5 -3 -5 -0.6 TC=25℃ 10 Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Ta=25℃ 1.2 150 -55~150 Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA636 2SA636A TYP. UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 VBEsat ICBO Base-emitter saturation...