Full PDF Text Transcription for 2SA658 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SA658. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor 2SA658 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Complement to Type 2SC521 ·Minimum Lot-to-Lot variations...
View more extracted text
= -50V(Min.) ·Complement to Type 2SC521 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.
2SA658 Datasheet
