2SA714
2SA714 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications.
- Power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
VCEO Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-7
℃
Tstg
Storage Temperature
-55~150 ℃
2SA714 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
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