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2SA747 - POWER TRANSISTOR

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Description

High Power Dissipation- : PC= 100W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC1116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general purpose applications.

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Datasheet Details

Part number 2SA747
Manufacturer Inchange Semiconductor
File Size 196.05 KB
Description POWER TRANSISTOR
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isc Silicon PNP Power Transistor 2SA747 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1116 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -4 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.
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