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2SA753 Datasheet Preview

2SA753 Datasheet

POWER TRANSISTOR

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isc Silicon PNP Power Transistor
2SA753
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.)
·Complement to Type 2SC1343
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for 100W audio amplifier power output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IC
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
-12
A
100
W
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SA753 Datasheet Preview

2SA753 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -10A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
hFE-1 Classifications
A
B
C
30-60 50-120 100-200
2SA753
MIN TYP. MAX UNIT
-110
V
-140
V
-5
V
-1.5 V
-1.5 V
-1 mA
30
200
15
20
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA753
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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