2SA766
2SA766 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Base Breakdown Voltage-
: V(BR)CBO= -150V(Min)
- High Collector Power Dissipation- plement to Type 2SC1450
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Line-operated vertical deflection output
- Medium power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
VCEO Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-0.4
Collector Current-Peak
Total Power Dissipation @ TC=25℃
Junction Temperature
-1.2
℃
Tstg
Storage Temperature Range
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power...
