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Inchange Semiconductor

2SA794A Datasheet Preview

2SA794A Datasheet

POWER TRANSISTOR

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isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Complement to Type 2SC1567A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for low-frequency high power driver.
·Optimum for the driver stage of low-frequency and 40W
to 100W output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-1.0
A
10
W
150
Tstg
Storage Temperature Range
-55~150
isc Product Specification
2SA794A
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SA794A Datasheet Preview

2SA794A Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
isc Product Specification
2SA794A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -0.1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -10V
hFE-2
DC Current Gain
IC=-500mA ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -50mA ; VCE= -10V
COB
Output Capacitance
IE=0 ; VCB= -100V,ftest= 1MHz
MIN TYP. MAX UNIT
-120
V
-5
V
-0.4 V
-1.2 V
-100 μA
-10 μA
90
220
50
120
MHz
20
pF
hFE-1 Classifications
Q
R
90-155 130-220
isc Silicon PNP Power Transistor
2SA794A
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA794A
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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