isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Complement to Type 2SC1567A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for low-frequency high power driver.
·Optimum for the driver stage of low-frequency and 40W
to 100W output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1.0
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Product Specification
2SA794A
isc website：www.iscsemi.com
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