Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
DC Current Gain
: hFE= 40-240@ IC= -0.5A
Complement to Type 2SC1669
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon PNP Power Transistor
2SA839
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 40-240@ IC= -0.5A ·Complement to Type 2SC1669 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio power amplifier applications. ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
IE
Emitter Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SA839 Datasheet
