2SA913 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) Complement to Type 2SC1913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for AF high power dirver applications.

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2SA913 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA913
Manufacturer	Inchange Semiconductor
File Size	205.09 KB
Description	POWER TRANSISTOR
Datasheet	2SA913 Datasheet

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isc Silicon PNP Power Transistor 2SA913 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC1913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.