| Part number | 2SA957 |
|---|---|
| Datasheet | 2SA957_InchangeSemiconductor.pdf |
| File Size | 199.68 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA957 | (2SA957 / 2SA958) Silicon POwer Transistors | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA958 | POWER TRANSISTOR |
| 2SA959 | POWER TRANSISTOR |
| 2SA907 | POWER TRANSISTOR |
| 2SA908 | POWER TRANSISTOR |
| 2SA909 | POWER TRANSISTOR |
| 2SA913 | POWER TRANSISTOR |
| 2SA913A | POWER TRANSISTOR |
| 2SA914 | POWER TRANSISTOR |
| 2SA940 | Silicon PNP Power Transistor |
| 2SA963 | POWER TRANSISTOR |
