2SA959
2SA959 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
- High Power Dissipation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-10
℃
Tstg
Storage Temperature
-65~200 ℃
2SA959 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER...
