| Part number | 2SA959 |
|---|---|
| Datasheet | 2SA959_InchangeSemiconductor.pdf |
| File Size | 193.09 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA959 | Silicon POwer Transistors | SavantIC |
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| 2SA957 | POWER TRANSISTOR |
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| 2SA913 | POWER TRANSISTOR |
| 2SA913A | POWER TRANSISTOR |
| 2SA914 | POWER TRANSISTOR |
| 2SA940 | Silicon PNP Power Transistor |
| 2SA963 | POWER TRANSISTOR |
