Datasheet Details
| Part number | 2SAR586D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.31 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SAR586D Download (PDF) |
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| Part number | 2SAR586D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 240.31 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SAR586D Download (PDF) |
|
|
|
·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.32V@(IC=-2A,IB=-100mA) ·Complementary NPN types:2SCR586D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR586D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BVCBO Collector
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SAR586D.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SAR586D | Middle Power Transistors | ROHM |
| Part Number | Description |
|---|---|
| 2SAR572D | Silicon PNP Power Transistor |
| 2SAR573D | Silicon PNP Power Transistor |
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| 2SA1008 | POWER TRANSISTOR |
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