Datasheet Details
| Part number | 2SB1290 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 2SB1290 Datasheet
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| Part number | 2SB1290 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
2SB1290 Datasheet
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·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1290 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1290 | PNP Transistor | ROHM |
| Part Number | Description |
|---|---|
| 2SB1201 | Silicon PNP Power Transistor |
| 2SB1202 | Silicon PNP Power Transistor |
| 2SB1203 | Silicon PNP Power Transistor |
| 2SB1204 | Silicon PNP Power Transistor |
| 2SB1215 | Silicon PNP Power Transistor |
| 2SB1216 | Silicon PNP Power Transistor |
| 2SB1217 | Silicon PNP Power Transistor |
| 2SB1261-K | Silicon NPN Power Transistor |
| 2SB1275 | Silicon PNP Power Transistor |
| 2SB1089 | Silicon PNP Power Transistors |