Datasheet Details
| Part number | 2SB649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB649 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB649 Download (PDF) |
|
|
|
·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 20 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB649 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
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2SB649 | Silicon PNP Transistor | Hitachi Semiconductor |
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