Datasheet Details
| Part number | 2SB688 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.75 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB688 Download (PDF) |
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| Part number | 2SB688 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.75 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SB688 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD718 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB688 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
isc Silicon PNP Power Transistor 2SB688.
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2SB688 | Silicon PNP Power Transistors | Savantic |
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2SB688 | SILICON PNP TRANSISTORS | UTC |
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