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Inchange Semiconductor

2SB874 Datasheet Preview

2SB874 Datasheet

Silicon PNP Power Transistor

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB874
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -1.5A
·Complement to Type 2SD1177
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-60 V
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-2 A
ICM Collector Current-Peak
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-3 A
20 W
150
-55~150
isc Websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SB874 Datasheet Preview

2SB874 Datasheet

Silicon PNP Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB874
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -5V
ICBO Collector Cutoff Current
VCB= -80V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -2A; VCE= -5V
COB Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
MIN TYP. MAX UNIT
-60 V
-100
V
-5 V
-1.0 V
-1.4 V
-1.0 μ A
-1.0 μ A
60 200
40
50 pF
hFE-1 Classifications
BC
60-120 100-200
isc Websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number 2SB874
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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