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2SB897 - Silicon PNP Power Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -10A Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max.) @IC= 10A Complement to Type 2SD1210 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency powe

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Datasheet Details

Part number 2SB897
Manufacturer Inchange Semiconductor
File Size 216.77 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1.
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