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2SB904 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector Current:IC= -20A ·Low Collector Saturation Voltage : VCE(sat)=- 0.5V(Max)@IC= 8A ·Complement to Type 2SD1213 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching of relay drivers, high-speed inverters,converters applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB904 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;

IB= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA;

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB904.