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2SB920 - Silicon PNP Power Transistor

Description

High Collector Current:IC= -5A Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A Complement to Type 2SD1236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose large current switching app

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Datasheet Details

Part number 2SB920
Manufacturer Inchange Semiconductor
File Size 218.09 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor 2SB920 DESCRIPTION ·High Collector Current:IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD1236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose large current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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