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2SB925 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB925 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;

Overview

isc Silicon PNP Power Transistor 2SB925.