2SB955 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor 2SB955 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -5A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: 2SB955
Manufacturer: Inchange Semiconductor
File Size: 213.64 KB
Datasheet: 2SB955-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak

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2SB955 Silicon PNP Power Transistor Inchange Semiconductor

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