Datasheet Details
| Part number | 2SB966 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.34 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 2SB966_InchangeSemiconductor.pdf
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The 2SB966 is Silicon PNP Power Transistors designed by Inchange Semiconductor.
| Part number | 2SB966 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.34 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
2SB966_InchangeSemiconductor.pdf
|
|
|
|
Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Complement to Type 2SD1289 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO E
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