Datasheet4U Logo Datasheet4U.com

2SB966 Datasheet Silicon PNP Power Transistors

Manufacturer: Inchange Semiconductor

General Description

·Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1289 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse -12 A PC Total Power Dissipation @ Tc=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB966 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -5.0A;

IB= -0.5A VBE(sat)NOTE Base-Emitter Saturation Voltage IC= -5.0A;

IB= -0.5A IEBO Emitter Cutoff Current VEB= -5V;

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB966.