2SB966 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB966 .
Low Collector Saturation Voltage : VCE(sat)= -0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Compleme.

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Datasheet Specifications

Part number: 2SB966
Manufacturer: Inchange Semiconductor
File Size: 205.34 KB
Datasheet: 2SB966_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse

2SB966 Distributors

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2SB966 Silicon PNP Power Transistors Inchange Semiconductor

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