Datasheet Details
| Part number | 2SB979 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.08 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Download | 2SB979 Download (PDF) |
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| Part number | 2SB979 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.08 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Download | 2SB979 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 60 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB979 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
IB= -0.3A VBE(on) Base -Emitter On Voltage IC= -3A;
isc Silicon PNP Power Transistor 2SB979.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB979 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB974 | Silicon PNP Darlington Power Transistor |
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| 2SB900 | Silicon PNP Power Transistor |
| 2SB903 | Silicon PNP Power Transistor |
| 2SB904 | Silicon PNP Power Transistor |
| 2SB920 | Silicon PNP Power Transistor |
| 2SB921 | Silicon PNP Power Transistor |
| 2SB922 | Silicon PNP Power Transistor |
| 2SB923 | Silicon PNP Power Transistor |
| 2SB924 | Silicon PNP Power Transistor |