2SB979 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SB979 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

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Datasheet Specifications

Part number: 2SB979
Manufacturer: Inchange Semiconductor
File Size: 220.08 KB
Datasheet: 2SB979_InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse C

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2SB979 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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