2SB979 transistor equivalent, silicon pnp darlington power transistor.
*Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Co.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high .
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