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2SC1871A Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 10 A 100 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.25 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1871A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;

IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;

IB= 0.8A ICBO Collector Cutoff Current VCB= 500V, IE= 0 ICEO Collector Cutoff Current VCE= 400V, IB= 0 IEBO Emitter Cutoff Current VEB= 7V;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1871A.