Download 2SC1881K Datasheet PDF
Inchange Semiconductor
2SC1881K
2SC1881K is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - High DC Current Gain- : h FE = 1000(Min)@ IC= 1.5A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for High gain amplifier power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25℃ Tj Junction Temperature ℃ Tstg Storage Temperature Range -55~150...