Datasheet Details
| Part number | 2SC2314 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.65 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2314 Download (PDF) |
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| Part number | 2SC2314 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.65 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2314 Download (PDF) |
|
|
|
·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω ·Collector Current- :IC=1.5A ·Low Saturation Voltage : VCE(sat)=0.6V(MAX)@ IC=0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 75 V VCER Collector-Emitter Voltage RBE=150Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2314 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=0.5A;
IB= 0.05A ICBO Collector Cutoff Current VCB= 40V ;
IE= 0 IEBO Emitter Cutoff Current VEB= 5V;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2314 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC2314 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS | TGS |
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