Datasheet Details
| Part number | 2SC2481 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.03 KB |
| Description | Power Transistor |
| Download | 2SC2481 Download (PDF) |
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| Part number | 2SC2481 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.03 KB |
| Description | Power Transistor |
| Download | 2SC2481 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High Current Capability ·High Collector Power Dissipation ·Complement to Type 2SA1021 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vertical deflection output applications.
·Color TV class B sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.0 A 20 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2481.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2481 | Silicon NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SC2408 | Silicon NPN RF Transistor |
| 2SC2414 | Silicon NPN Power Transistor |
| 2SC2415 | Silicon NPN Power Transistor |
| 2SC2416 | Silicon NPN Power Transistor |
| 2sc2433 | Silicon NPN Power Transistor |
| 2SC2437 | Silicon NPN Power Transistors |
| 2SC2438 | Silicon NPN Power Transistors |
| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
| 2SC2247 | Power Transistor |