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Inchange Semiconductor

2SC2481 Datasheet Preview

2SC2481 Datasheet

Power Transistor

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC2481
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·High Current Capability
·High Collector Power Dissipation
·Complement to Type 2SA1021
APPLICATIONS
·Color TV vertical deflection output applications.
·Color TV class B sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
150 V
wwwVEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous 1.5 A
IBB Base Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
1.0 A
20
W
1.2
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn




Inchange Semiconductor

2SC2481 Datasheet Preview

2SC2481 Datasheet

Power Transistor

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC2481
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
1.5 V
VBE(on) Base-Emitter On Voltage
IC= 5mA; VCE= 5V
0.8 V
ICBO Collector Cutoff Current
VCB= 150V; IE= 0
1.0 μA
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
1.0 μA
hFE DC Current Gain
IC= 0.2A; VCE= 5V
i.cnfT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 5V
.iscsemCOB Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
www‹ hFE Classifications
60 320
20 100
MHz
13 pF
ROY
60-120 100-200 160-320
isc Websitewww.iscsemi.cn
2


Part Number 2SC2481
Description Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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