Datasheet Details
| Part number | 2SC2518 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.69 KB |
| Description | Power Transistor |
| Download | 2SC2518 Download (PDF) |
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| Part number | 2SC2518 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.69 KB |
| Description | Power Transistor |
| Download | 2SC2518 Download (PDF) |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic applicance applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
isc Silicon NPN Power Transistor 2SC2518.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2518 | NPN SILICON POWER TRANSISTOR | NEC |
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