Datasheet Details
| Part number | 2SC2522 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.97 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2522 Download (PDF) |
|
|
| Part number | 2SC2522 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.97 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2522 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SA1072 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2522 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA ;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SC2526 | Silicon NPN Power Transistor |
| 2SC2528 | Silicon NPN Power Transistor |
| 2SC2518 | Power Transistor |
| 2SC2553 | Silicon NPN Power Transistors |
| 2SC2555 | Silicon NPN Power Transistors |
| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
| 2SC2247 | Power Transistor |
| 2SC2248 | Power Transistor |
| 2SC2293 | Silicon NPN Power Transistor |