Datasheet Details
| Part number | 2SC2526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.14 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2526 Download (PDF) |
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| Part number | 2SC2526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.14 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2526 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1076 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2526 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter –Base Breakdown Voltage IC= 50uA ;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2526 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu Media Devices Limited |
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