Datasheet Details
| Part number | 2SC2528 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.01 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2528 Download (PDF) |
|
|
| Part number | 2SC2528 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.01 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2528 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.7A ·Complement to Type 2SA1078 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifier, Audio power amplifier Dirvers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.0 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2528 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2528 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2528 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu |
| Part Number | Description |
|---|---|
| 2SC2522 | Silicon NPN Power Transistor |
| 2SC2526 | Silicon NPN Power Transistor |
| 2SC2518 | Power Transistor |
| 2SC2553 | Silicon NPN Power Transistors |
| 2SC2555 | Silicon NPN Power Transistors |
| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
| 2SC2247 | Power Transistor |
| 2SC2248 | Power Transistor |
| 2SC2293 | Silicon NPN Power Transistor |