Datasheet Details
| Part number | 2SC2555 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.04 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC2555 Download (PDF) |
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| Part number | 2SC2555 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.04 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC2555 Download (PDF) |
|
|
|
·High Collector-Emitter Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2555 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2555 | TRANSISTOR | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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| 2SC2522 | Silicon NPN Power Transistor |
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| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
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| 2SC2293 | Silicon NPN Power Transistor |