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2SC2653H Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·High VCEO ·Large Pc APPLICATIONS ·Color TV Horizontal ·Deflection Driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 480 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous Total Power Dissipation Pc @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.2 A 15 W 150 ℃ -55~150 ℃ isc Website:www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor Product Specification 2SC2653H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Sustaining Voltage IC=5mA ;

IB= 0;

Ta=100℃ VCBO Collector-Base Sustaining Voltage IC=0.1mA ;

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor Product.