Datasheet Details
| Part number | 2SC2665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.23 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2665 Download (PDF) |
|
|
| Part number | 2SC2665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.23 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2665 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 55 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SC2665 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SC2624 | Power Transistor |
| 2SC2625 | Silicon NPN Power Transistors |
| 2SC2653H | Silicon NPN Power Transistor |
| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
| 2SC2247 | Power Transistor |
| 2SC2248 | Power Transistor |
| 2SC2293 | Silicon NPN Power Transistor |
| 2SC2314 | Silicon NPN Power Transistor |
| 2SC2408 | Silicon NPN RF Transistor |