2SC2759 - Silicon NPN RF Transistor

Description

Low Noise

Gcb= 12.5dB TYP.

Designed for use in VHF RF amplifier, local oscillator,mixer.

Inchange Semiconductor

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Datasheet Details

Part number	2SC2759
Manufacturer	Inchange Semiconductor
File Size	100.46 KB
Description	Silicon NPN RF Transistor
Datasheet	2SC2759 Datasheet
Additional preview pages of the 2SC2759 datasheet.

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2759 DESCRIPTION ·Low Noise ·High Conversion Gain Gcb= 12.5dB TYP. @IE= -5mA, VCB= 10V APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator,mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 30 V 14 V 3V 50 mA 0.15 W 125 ℃ -55~125 ℃ isc website：www.iscsemi.

Published: Jun 23, 2016 |