Datasheet Details
| Part number | 2SC2911 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.12 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2911 Download (PDF) |
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| Part number | 2SC2911 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.12 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2911 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1209 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 140 mA ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 200 mA 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
IB= 5mA ICBO Collector Cutoff Current VCB= 80V;
isc Silicon NPN Power Transistor 2SC2911.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2911 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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